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BUD42D High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
The BUD42D is a state-of-the-art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications.
Main Features:
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4 AMPERES 650 VOLTS 25 WATTS POWER TRANSISTOR
* * * *
Free Wheeling Diode Built In Flat DC Current Gain Fast Switching Times and Tight Distribution "6 Sigma" Process Providing Tight and Reproducible Parameter Spreads
Two Versions:
* BUD42D-1: Case 369-07 for Insertion Mode * BUD42D: Case 369A-13 for Surface Mount Mode
MAXIMUM RATINGS
Rating Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current - Continuous - Peak (Note 1) Base Current - Continuous - Peak (Note 1) *Total Device Dissipation @ TC = 25_C *Derate above 25_C Operating and Storage Temperature Symbol VCEO VCBO VCES VEBO IC ICM IB IBM PD TJ, Tstg Value 350 650 650 9 4.0 8.0 1.0 2.0 25 0.2 -65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watt W/_C _C DPAK CASE 369 STYLE 1 DPAK CASE 369A STYLE 1
MARKING DIAGRAMS
YWW BUD 43D2 YWW BUD 43D2
TYPICAL GAIN
Typical Gain @ IC = 1 A, VCE = 2 V Typical Gain @ IC = 0.3 A, VCE = 1 V hFE hFE 13 16 - - Y = Year WW = Work Week BUD43D2 = Device Code
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance - Junction-to-Case Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 seconds Symbol RJC RJA TL Value 5.0 71.4 260 Unit C/W C/W C
ORDERING INFORMATION
Device BUD42D BUD42D-1 Package DPAK DPAK Shipping 75 Units/Rail 75 Units/Rail
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
(c) Semiconductor Components Industries, LLC, 2001
1
October, 2001 - Rev. 1
Publication Order Number: BUD42D/D
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I II I I I II I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I IIIIIIIIIIIIIIIIIII I I I II I I I II I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I I II I I I II I II II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I I II I I I II I I II I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
DYNAMIC SATURATION VOLTAGE SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) DIODE CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Fall Time (IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = -2 V) Turn-Off Time (IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V) Forward Diode Voltage (IEC = 1.0 Adc) DC Current Gain (IC = 1 Adc, VCE = 2 Vdc) (IC = 2 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 0.5 Adc) Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Characteristic IC = 1 A IB1 = 200 mA VCC = 300 V IC = 400 mA IB1 = 40 mA VCC = 300 V @ 3 s @ 1 s @ 3 s @ 1 s @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C
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BUD42D
2 VCEO(sus) VCE(dsat) Symbol VCE(sat) VBE(sat) VCBO VEBO ICEO IEBO ICES VEC hFE Toff Tf Min 650 350 4.6 8.0 10 9.0 - - - - - - - - - - - - - - - - - 0.85 0.35 0.6 0.75 1.3 Typ 780 430 0.9 0.2 2.1 4.7 2.8 3.2 13 12 12 - - - - - - - 6.55 Max 10 200 100 100 200 0.8 1.5 1.0 1.2 - - - - - - - - - - - - - Adc Adc Adc Unit Vdc Vdc Vdc Vdc Vdc s s V V -
BUD42D
TYPICAL STATIC CHARACTERISTICS
100 100
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 125C TJ = 25C 10 TJ = -20C
TJ = 125C TJ = 25C 10 TJ = -20C
1
0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
1
0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain @ VCE = 1 V
Figure 2. DC Current Gain @ VCE = 5 V
3 TJ = 25C VCE , VOLTAGE (VOLTS) 2A 1.5 A 1 IC = 0.2 A 0 0.001 0.01 1A 0.4 A VCE , VOLTAGE (VOLTS)
10
IC/IB = 5
2
1
0.1
TJ = 125C TJ = -20C
TJ = 25C
1 0.1 IB, BASE CURRENT (AMPS)
10
0.01 0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 3. Collector Saturation Region
Figure 4. Collector-Emitter Saturation Voltage
100 IC/IB = 8 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 TJ = 125C 1 TJ = -20C TJ = 25C
10 IC/IB = 10 TJ = -20C TJ = 125C TJ = 25C
1
0.1
0.1
0.01 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
0.01 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Collector-Emitter Saturation Voltage
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BUD42D
TYPICAL STATIC CHARACTERISTICS
10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 10 IC/IB = 8
1
TJ = -20C
1
TJ = -20C
TJ = 125C
TJ = 25C
TJ = 125C
TJ = 25C
0.1 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
0.1 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. Base-Emitter Saturation Region
Figure 8. Base-Emitter Saturation Region
10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 10 VBE , VOLTAGE (VOLTS)
10
1
TJ = -20C
1
VEC(V) = -20C VEC(V) = 125C VEC(V) = 25C
TJ = 125C
TJ = 25C
0.1 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
0.1 0.01
0.1 1 REVERSE EMITTER-COLLECTOR CURRENT
10
Figure 9. Base-Emitter Saturation Region
Figure 10. Forward Diode Voltage
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BUD42D
TYPICAL SWITCHING CHARACTERISTICS
1000 Cib C, CAPACITANCE (pF) 100 Cob 10 TJ = 25C f(test) = 1 MHz BVCER (VOLTS) 900 800 700 600 500 400 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 300 TC = 25C 10 100 RBE (W) 1000 10000 ICER = 100 mA lC = 25 mH ICER = 10 mA
Figure 11. Capacitance
Figure 12. BVCER = f(RBE)
800 700 600 t, TIME (ns) 500 400 300 200 100 0 0 TJ = 125C TJ = 25C 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 hFE = 5 hFE = 10 IBon = IBoff VCC = 300 V PW = 40 s t, TIME (ns)
9 IBon = IBoff VCC = 300 V PW = 40 s 6
3 TJ = 125C TJ = 25C 0
hFE = 5
0
hFE = 10 2
1.5 0.5 1 IC, COLLECTOR CURRENT (AMPS)
Figure 13. Resistive Switching, ton
Figure 14. Resistive Switching, toff
4 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H TJ = 125C
4
3 t, TIME ( s)
TJ = 125C 3 TJ = 25C t, TIME ( s) TJ = 25C 2
IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H
2
1
0
0
0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS)
2
1
0.5
1.5 1 IC, COLLECTOR CURRENT (AMPS)
2
Figure 15. Inductive Storage Time, tsi @ hFE = 5 http://onsemi.com
5
Figure 16. Inductive Storage Time, tsi @ hFE = 10
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
400 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 250 TJ = 125C TJ = 25C t, TIME (ns) 200 TJ = 125C
300 t, TIME (ns)
tc 200
TJ = 25C 150 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2
tfi
100
0
0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS)
2
100
Figure 17. Inductive Fall and Cross Over Time, tfi and tc @ hFE = 5
500 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C 4 t, TIME ( m s) 5
Figure 18. Inductive Fall Time, tfi @ hFE = 10
400 t, TIME (ns)
IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IC = 1 A
TJ = 125C TJ = 25C
3
300 TJ = 25C 2 IC = 0.3 A
200
0.5
1 1.5 IC, COLLECTOR CURRENT (AMPS)
2
1
3
4
5
6
7 8 9 hFE, FORCED GAIN
10
11
12
Figure 19. Inductive Cross Over Time, tc @ hFE = 10
Figure 20. Inductive Storage Time, tsi
300 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 200
300
CROSS-OVER TIME (ns)
t fi , FALL TIME (ns)
IC = 0.3 A
IC = 1 A 200
IC = 0.3 A
IC = 1 A
100
TJ = 125C TJ = 25C 3 4 5 6 7 hFE, FORCED GAIN 8 9 10
100
TJ = 125C TJ = 25C 2 4 6 hFE, FORCED GAIN 8
IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 10
Figure 21. Inductive Fall Time, tf
Figure 22. Inductive Cross Over Time, tc
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BUD42D
TYPICAL SWITCHING CHARACTERISTICS
3 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IB 1 & 2 = 200 mA t fr , FORWARD RECOVERY TIME (ns) 440 420 400 380 360 340 320 300 0 1.5 1 0.5 IF, FORWARD CURRENT (AMPS) 2 di/dt = 10 A/ms, TC = 25C
2.5 t, TIME ( m s)
500 mA
2
50 mA
100 mA
1.5
1
0
0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS)
2
Figure 23. Inductive Storage Time, tsi
Figure 24. Forward Recovery Time, tfr
10 VCE Dyn 1 ms Dyn 3 ms 0V 90% IB IB 1 ms 3 ms 2 0 TIME 8 6 Vclamp 4 IB 90% IB1 IC tsi 10% Vclamp tc 90% IC tfi 10% IC
0
2
4 TIME
6
8
Figure 25. Dynamic Saturation Voltage Measurements
Figure 26. Inductive Switching Measurements
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BUD42D
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 RB1 Iout A 50 COMMON 500 F 150 3W MJE210 MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA VCE IB1 IB IB2 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 IC PEAK
MPF930 +10 V
1 F -Voff
VFRM VF
VFR (1.1 VF) UNLESS OTHERWISE SPECIFIED
0.1 VF
tfr
IF
10% IF
Figure 27. tfr Measurement
MAXIMUM RATINGS
10 IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 5 ms dc 1 EXTENDED SOA 1 ms 10 ms 1 ms 4 3 2 1 0 VBE = 0 V 300 VBE(off) = -1.5 V 700 VBE(off) = -5 V 5 TJ = 125C GAIN 4 LC = 500 mH
0.1
0.01
10
100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
400 500 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 28. Forward Bias Safe Operating Area http://onsemi.com
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Figure 29. Reverse Bias Safe Operating Area
BUD42D
1 POWER DERATING FACTOR 0.8 0.6 0.4 0.2 THERMAL DERATING 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 SECOND BREAKDOWN DERATING
Figure 30. Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25C; Tj(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second Breakdown limitations do not derate like thermal limitations. Allowable current at the voltages shown on
Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. Tj(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
1 D = 0.5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 t1 P(pk) RJC(t) = r(t) RJC RJC = 5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000
t2 DUTY CYCLE, D = t1/t2 0.1 1 t, TIME (ms) 10
0.01
Figure 31. Thermal Response
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BUD42D
Minimum Pad Sizes Recommended for Surface Mounted Applications
1.6 0.063
2.3 0.090 2.3 0.090
6.7 0.265
1.6 0.063
3.0 0.118
1.8 0.070
6.7 0.265
mm inches
TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 32 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 6 VENT STEP 7 COOLING 205 TO 219C PEAK AT SOLDER JOINT
STEP 1 PREHEAT ZONE 1 RAMP" 200C
STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP"
DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170C 160C
150C
100C 100C
140C
SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
50C
DESIRED CURVE FOR LOW MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 32. Typical Solder Heating Profile
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BUD42D
PACKAGE DIMENSIONS
DPAK CASE 369A-13 ISSUE AB
-T- B V R
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 ---
C E
A S
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005)
M
T
STYLE 1: PIN 1. 2. 3. 4.
DPAK STRAIGHT LEADS CASE 369-07 ISSUE M
B V R
4
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27
A
1 2 3
S -T-
SEATING PLANE
K
F D G
3 PL M
J H 0.13 (0.005) T
STYLE 1: PIN 1. 2. 3. 4.
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BUD42D
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BUD42D/D

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